• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a heterostructure, in particular a piezoelectric structure, comprising a cover layer, in particular a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the a support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface, wherein the cover layer comprises at least one recess extending from the interface in the cover layer, and its manufacturing process.
    公开号:FR3037443A1
    申请号:FR1501222
    申请日:2015-06-12
    公开日:2016-12-16
    发明作者:Arnaud Castex；Daniel Delprat；Bernard Aspar；Ionut Radu
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The present invention relates generally to a heterostructure, in particular a piezoelectric structure and a method for manufacturing a heterostructure, in particular a piezoelectric structure. Background of the Invention The object of the invention is to provide a heterostructure, in particular a piezoelectric structure, and a method of manufacturing a heterostructure, in particular a piezoelectric structure. Radio Frequency (RF) surface acoustic wave (SAW) technology is widely used in a wide variety of applications, such as, for example, duplexers of current mobile phones. Continued improvement of standard SAW technology has led to the development of temperature-compensated SAW devices to remain competitive with the RF BAW technology. Temperature compensated SAWs can be obtained within a piezoelectric structure 100 comprising a layer of piezoelectric material 120 mounted on a support substrate 110, optionally with an adhesive layer 130 therebetween, as is schematically shown in Figure 1A. The recent development of 25 temperature-compensated SAW devices has been reported in a recent publication by Hashimoto et al., "Recent Development of Temperature Compensated SAW Devices," Ultrasonics Symposium 2011, IEEE International, pages 79-86, and this publication illustrates more in detail the approach of Figure 1A. The support substrate 110 thus has a function 30 of stiffening the piezoelectric structure 100. However, such a piezoelectric structure 100, as shown diagrammatically in FIG. 1A, may not be suitable for withstanding heat treatments because of the substantial difference between the respective coefficients of thermal expansion (CTE) of the layer of piezoelectric material 120 and that of the support substrate 110. Such a difference in CTE can be, in the worst case, the cause of the breakage of this structure at temperatures above a predetermined threshold. Other phenomena, such as, for example, buckling in the layer of piezoelectric material 120, can occur. In addition, the camber of the piezoelectric structure 100 is likely to exceed the critical values during heat treatments, such as the value above which the electrostatic clamping parts can lose contact with the structure. In addition, the strong anisotropy of CTEs for most piezoelectric materials makes heat treatments difficult due to the accumulation of anisotropic stresses. FIG. 1B schematically represents an approach described in US Pat. No. 8,666,447 by which recesses 140 have been formed on the face of the structure 100 'opposite to the face of the layer 120' assembled to the substrate 110 '. Such a formation of recesses in a layer 120 'formed on a substrate 110' having a CTE substantially different from that of the layer 120 'can help accommodate the stresses accumulated in this structure 100'.
    [0002] However, several problems are encountered using such an approach. In particular, for a layer 120 'having a relatively small thickness in the range of 1 to 10 μm, care must be taken not to damage the interface underlying the substrate 110'. Uncertain methods, such as, for example, sawing, can lead to damage to either the substrate 110 'in the region of the surface thereof, leaving nucleation sites for failure or the adhesive layer (not shown). in Figure 1B). This is particularly detrimental to the structure 110 'if subsequent lithography and etching steps are involved, which could result in significant undercoating of the layer 120'. In addition, the substrate 110 'could have on its surface to be assembled a functional layer which should not be altered so as not to lose its specific properties. The present invention avoids the problems mentioned above.
    [0003] DESCRIPTION OF THE INVENTION In particular, the present invention relates to a heterostructure, in particular a piezoelectric structure, comprising a cover layer, in particular a layer of piezoelectric material, the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface, wherein the cover layer comprises at least one recess 20 extending from the interface in the overlay layer. Other advantageous embodiments relate to a heterostructure in which the at least one recess forms a trench extending over the entire covering layer.
    [0004] Other advantageous embodiments relate to a heterostructure in which portions of the cover layer separated by the at least one recess have a lateral extension less than a predetermined critical length above which a break due to a treatment. thermal at a predetermined temperature would occur.
    [0005] Other advantageous embodiments relate to a heterostructure in which the at least one recess extends on the surface of the facing layer opposite the interface with the support substrate.
    [0006] Other advantageous embodiments relate to a heterostructure in which at least one of the thermal expansion coefficients exhibits strong anisotropy. Other advantageous embodiments relate to a heterostructure 10 in which the material of the covering layer is a piezoelectric material, in particular chosen from the following: LTO, LNO, AlN, ZnO. Other advantageous embodiments relate to a heterostructure in which the material of the support substrate is selected from the following group: Si, Ge, GaAs, InP, SiGe, sapphire. Other advantageous embodiments relate to a heterostructure in which the support substrate comprises a functional layer adjacent to the interface. Other advantageous embodiments relate to a heterostructure in which the functional layer provides the support substrate with electrical resistivity greater than 1 kOhm / cm, preferably greater than 5 kOhm / cm. Other advantageous embodiments relate to a heterostructure in which the functional layer has a thickness of less than 10 μm, preferably less than 1 μm, or even more preferably less than 100 μm.
    [0007] The present invention also relates to a method of manufacturing a heterostructure comprising a step of providing a support substrate and providing a cover layer, in particular a layer of piezoelectric material, a step of forming at least one in a surface of the cover layer and a step comprising assembling the support substrate and the cover layer at an assembly interface between the support substrate and the surface of the cover layer comprising the at least one recess.
    [0008] Other advantageous embodiments relate to a process for manufacturing a heterostructure further comprising a step of thinning the surface of the covering layer opposite to the assembly interface.
    [0009] Other advantageous embodiments relate to a method of manufacturing a heterostructure in which the thinning step comprises a step of implanting atomic or ionic species, in particular H or He, before assembly, to form a embrittlement zone 20 in the covering layer, and an exfoliation step at the weakening zone after assembly. Other advantageous embodiments relate to a method of manufacturing a heterostructure in which the thinning is carried out by a technique selected from the group of the following techniques: grinding, polishing, etching, or any combination of these techniques. Other advantageous embodiments relate to a method of manufacturing a heterostructure in which the thinning step leaves open the at least one recess.
    [0010] The invention will be described in more detail by way of an example below using advantageous embodiments and with reference to the drawings. The embodiments described are only possible configurations, in which the individual features can, however, be implemented independently of each other, or omitted. FIG. 1A schematically illustrates a piezoelectric structure for temperature compensated SAW devices, as known from the prior art. Figure 1B schematically illustrates a heterostructure for containing a CTE disparity, as known from the prior art. Figs. 2A, 2B, 2C and 2D schematically illustrate a heterostructure according to embodiments of the present invention.
    [0011] Figures 3A, 3B and 3C schematically illustrate a top view of a heterostructure according to embodiments of the present invention. Figure 4 schematically illustrates a method of manufacturing a heterostructure according to embodiments of the present invention. Figure 5 schematically illustrates a method of manufacturing a heterostructure according to embodiments of the present invention.
    [0012] The present invention will now be described with reference to specific embodiments. It will be apparent to those skilled in the art that features and variants of any embodiments may be combined, independently of one another, with features and variations of any other embodiment, according to the scope of the claims.
    [0013] In the following description of the present invention, reference is made to an example of a piezoelectric structure and a layer of piezoelectric material. However, as already indicated above, the present invention is not limited to this particular embodiment, but relates to any heterostructure (200, 400, 400 ', 500') comprising a cover layer (220, 320 , 420, 520) and a support substrate (210, 410, 510) with the thermal expansion coefficient of the cover layer being substantially different from that of the support substrate. Such a heterostructure encompasses the specific embodiment of a piezoelectric structure identifiable as a heterostructure with the piezoelectric material layer identifiable as a cover layer mentioned above. The present invention also relates to a method of manufacturing such a heterostructure (200, 400, 400 ', 500').
    [0014] FIG. 2A schematically shows a piezoelectric structure 200 comprising a piezoelectric material layer 220, a support substrate 210, and at least one recess 240 extending from the interface at which the piezoelectric material layer 220 and the substrate The piezoelectric material layer 220 has a first thermal expansion coefficient CTE1 and the support substrate 210 has a second coefficient of thermal expansion CTE2, which is substantially different from the first one. coefficient of thermal expansion; that is, the Max (CTE1; CTE2)> Min (CTE1; CTE2) relationship is satisfied. In particular, it is specified by Max (CTE1; CTE2) / Min (CTE1; CTE2)> 2, preferably> 4 or> 6, where Max (CTE1; CTE2) and Min (CTE1; CTE2) are the most significant value. high and the lowest value of CTE1 and CTE2, respectively. This is also applicable in the case of anisotropic ETC values so as to calculate the highest disagreement of the ETCs.
    [0015] The at least one recess 240 may be formed by well-known techniques such as masking and etching (involving lithography), or sawing, depending on the accuracy required to define the recess. The lateral dimension of the at least one recess 240 can easily be defined as being in the range of 100 μm to 5 mm, the depth profile can be controlled in the range of 0.5 μm. at 50 pm, depending on the chemical composition, the speed of etching and the duration of etching, for example. Sawing, as a low cost alternative, makes it possible to easily obtain trenches 1 to 2 mm wide, with controlled depth profiles with an uncertainty of several μm. In case of layer transfer (eg SmartCurTm), as detailed below, opening at least one recess can be achieved by adjusting the thickness of the layer to be transferred in a range below the depth profile of the at least one. recess. In the case of a cover layer of piezoelectric material, the piezoelectric material may be lithium tantalate (LTO), lithium niobate (LNO), aluminum nitride (AlN), zinc oxide ( ZnO) or 20 others. The material of the support substrate 200 may be chosen from the following group: Si, Ge, SiGe, GaAs, InP, sapphire, or any other substrate used in particular in the semiconductor industry.
    [0016] The embodiment schematically depicted in FIG. 2B differs from that shown in FIG. 2A in that the adhesive layer 230 is present at the interface between the piezoelectric material layer 220 and the support substrate 210. As will be discussed in detail below, the assembly of the piezoelectric material layer 220 and the support substrate 210 may involve bonding techniques, in particular molecular bonding techniques, and the adhesive layer 230 may be the interface of 3037443 Bonding two oxide layers each formed on the layer of piezoelectric material 220 and the support substrate 210 prior to bonding. Other joining techniques could involve other types of adhesive layers 230, such as, for example, glue resins or glues. The embodiment diagrammatically shown in FIG. 2C differs from that of FIG. 2A and FIG. 2B in that the support substrate 210 comprises a functional layer 250 near the interface with the layer of piezoelectric material 220. For example, in the case of a support substrate 210 made of silicon, in particular a highly resistive silicon substrate having an electrical resistivity greater than 1 kOhm / cm or even 5 kOhm / cm, the functional layer 250 could be a layer described as a rich trapping layer in order to eliminate the conductive characteristics of the interface in the vicinity of the oxide bonding layers. Said rich trapping layer could either be formed as a polycrystalline silicon layer, or by introducing a predetermined level of porosity into said functional layer. Such a highly resistive functional layer 250 at the interface is of particular interest for piezoelectric structures 200 used for SAW devices, for which any electrical loss of signals is detrimental to the performance of the device. Further, such a functional layer 250 may be used to electrically disconnect or decouple the piezoelectric layer layer 220 from the support substrate 210. Such a functional layer 250 may have a thickness less than 10 μm, or even less than 1 μm, or even less than 100 pm. The most important material is silicon with respect to support substrate 210 as it is the most commonly used material in the semiconductor industry. Handling and integration into existing production lines is thus facilitated by using such a silicon support substrate 210. In addition, functional microelectronic devices, such as CMOS, can be integrated into the support substrate. 210, and electrically connected (electrical vias not shown in Fig. 2D), where necessary, with the piezoelectric devices passing through said highly resistive functional layer 250, thereby leading to a very compact device structure having minimized crosstalk.
    [0017] The embodiment schematically depicted in Fig. 2D differs from those shown in Figs. 2A-2C in that the at least one recess extends from the interface to the surface of the piezoelectric material layer 220 opposite the This configuration further improves the ability to contain stress buildup during heat treatments. However, the active surface of the piezoelectric material is reduced because the at least one recess has been opened. The lateral dimension of the at least one recess 240 must be chosen so as to have sufficient mechanical stability of the piezoelectric structure 200, while increasing the active surface of the piezoelectric material. Figures 3A, 3B and 3C schematically show plan views 25 at the wafer level where different embodiments of the at least one recess 340 are shown. In the case where no anisotropy of the CTE is present, a configuration as shown in Figure 3A could be sufficient to suppress adverse effects of heat treatments due to non-equal CTE. Spot recesses 340 in the layer of the piezoelectric layer 320 at a distance d1 to the nearest recess and / or the second nearest recess are formed at the interface with the support substrate, whereby the distance dl (d11 for the nearest and d12 for the second closest distance in FIG. 3A) is chosen to be less than a predetermined critical length c1. Such critical length c 1 is defined as the value above which a heat treatment at a predetermined temperature would result in adverse effects. Such detrimental effects would, for example, exceed a critical value for camber, causing buckling in the piezoelectric material layer, or causing breakdown of the piezoelectric structure. Considering that the handling and cambering problems could be controlled, in particular rupture and buckling would be avoided for temperatures up to 250 ° C or up to 500 ° C, which correspond to heat treatments. used, for example, during packaging and front end processes of devices.
    [0018] FIGS. 3B and 3C schematically show the cases in which a strong CTE anisotropy is present. The at least one recess forms a trench extending over the entire layer of piezoelectric material 320. The distances dlx and dly, respectively for the main axes x and y, are thus smaller than the critical length assigned to these main axes x and y, and follow the same criteria as those described above in relation to Figure 3A. Figure 4 shows schematically the method of manufacturing the piezoelectric structure 400. The at least one recess 440 is formed in a layer of piezoelectric material 420, for example by lithography / masking and etching techniques. The depth of the at least one recess 440 may depend on the stress to be contained in the piezoelectric structure 400 during subsequent heat treatment, and may be in the range of 100 nm to 20 or even 50 pm. Optionally, the at least one recess 440 is filled with material, for example silicon oxide, deposited in the recess (i.e., PVD or CVD). This could be advantageous for bonding or etching subsequently applied to such a structure. Optional steps S41a and S41b show schematically the placement of a bonding layer 460 on both the piezoelectric material layer 420 and the support substrate 410 (however, the present invention is not limited to such an approach and one could also imagine the use of a bonding layer 460 instead, or even none), for example a silicon oxide deposited on the respective surfaces. Such bonding layers 460 could be or further processed for a subsequent assembly step S42, for example comprising polishing to minimize roughness at the bonding interface. Assembly step S42 could be obtained by any type of bonding technique, in particular molecular bonding. The optional bonding layers 460 thus form the adhesive layer 430. Similar configurations can be obtained by the use of glue or other adhesives, such as, for example, bonding resins. The use of the bonding layer 460 at the interface with the piezoelectric material layer 420 is of particular interest in the case where it is desired to roughen said interface with the bonding layer 460 while maintaining a high bonding energy at the bonding layer 460. link interface level. The rough interface at the piezoelectric material layer 420 may be used to avoid what is called a ripple effect in the final SAW device.
    [0019] After assembling the piezoelectric material layer 420 and the support substrate 410, step S43 schematically represents a step of thinning the surface of the layer of piezoelectric material 420 opposite to the assembly interface. Such thinning step S43 may be achieved by a technique, but not limited to, one of the following: grinding, polishing, etching, or any combination of these techniques. It is thus possible to leave the at least one recess open and to obtain a piezoelectric structure 400 ', as shown in FIG. 4, after step S43.
    [0020] FIG. 5 schematically shows a method of manufacturing a piezoelectric structure 500 'in which the respective thinning step S53 comprises an exfoliation step at a zone of weakness 560 after assembly of the piezoelectric structure 500' . The zone of weakness 570 can be generated by the implantation of ionic and / or atomic species, for example H or He. Such an approach is generally known as SmartCutTM. FIG. 5 schematically shows that the implantation step can be carried out either before (step SA1) or after (step SB1) the formation of the at least one recess 540 (steps SA2 and SB2) in the layer of piezoelectric material 520.
    [0021] In addition, FIG. 5 schematically illustrates the steps of providing the optional adhesive layer 530 in step S51, as described in the flow of the process of FIG. 4, and the assembling step S52. FIG. 5 then represents only the scenario for which the depth of the at least one recess 540 is greater than the depth of the zone of weakness 570, which thus leads to a piezoelectric structure 500 'with the at least one recess 540 left open by the thinning step S53. The present invention is not limited to such embodiments, and the depth can be easily adapted to obtain final piezoelectric structures in accordance with the embodiments shown in FIGS. 2A-2C, for example. The layer thickness of the piezoelectric layer 520, with the recess 540 left open, or not, can be chosen to be in the range from 100 nm to 1 μm, or even 10 μm, or even to 20 pm.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. Heterostructure (200, 400, 400 ', 500'), in particular a piezoelectric structure, comprising a cover layer (220, 420, 520), in particular a layer of piezoelectric material, the cover layer (220, 420, 520) having a first coefficient of thermal expansion, assembled to a support substrate (210, 410, 510), the support substrate (210, 410, 510) having a second coefficient of thermal expansion substantially different from the first coefficient of expansion 10 at an interface in which the cover layer (220, 420, 520) comprises at least one recess (240, 340, 440, 540) extending from the interface in the cover layer (220, 420, 520) ).
    [0002]
    The heterostructure (200, 400, 400 ', 500') according to claim 1, wherein the at least one recess (240, 340, 440, 540) forms a trench extending over the entire diaper covering (220, 420, 520).
    [0003]
    3. The heterostructure (200, 400, 400 ', 500') according to one of the preceding claims, wherein parts of the cover layer (220, 420, 520) separated by the at least one recess (240, 340, 440, 540) have a lateral extension less than a predetermined critical length above which a break due to heat treatment at a predetermined temperature would occur. 25
    [0004]
    4. A heterostructure (200, 400, 400 ', 500') according to one of the preceding claims, wherein the at least one recess (240, 340, 440, 540) extends to the surface of the layer covering (220, 420, 520) opposite the interface with the support substrate (210, 410, 510). 3037443 15
    [0005]
    5. Heterostructure (200, 400, 400 ', 500') according to one of the preceding claims, wherein at least one of the thermal expansion coefficients has a strong anisotropy.
    [0006]
    6. Heterostructure (200, 400, 400 '500') according to one of the preceding claims, wherein the material of the cover layer (220, 420, 520) is a piezoelectric material, selected, in particular, from LTO , LNO, AIN and ZnO.
    [0007]
    The heterostructure (200, 400, 400 ', 500') according to one of the preceding claims, wherein the material of the support substrate (210, 410, 510) is selected from the following group: Si, Ge, GaAs, InP, SiGe, sapphire.
    [0008]
    The heterostructure (200, 400, 400 ', 500') according to one of the preceding claims, wherein the support substrate (210, 410, 510) comprises a functional layer (250) adjacent to the interface.
    [0009]
    The heterostructure (200, 400, 400 ', 500') according to the preceding claim, wherein the functional layer (250) provides the support substrate (210, 410, 510) with an electrical resistivity greater than 1 kOhm / cm. preferably greater than 5 kOhm / cm.
    [0010]
    10. The heterostructure (200, 400, 400 ', 500') according to claims 8 and 9, wherein the functional layer (250) has a thickness of less than 10 μm, preferably less than 1 μm, or even more preferably less than 1 μm. at 100 nm.
    [0011]
    A method of manufacturing a heterostructure (200, 400, 400 ', 500') comprising a step of providing a support substrate (210, 410, 510) and providing a cover layer (220, 420, 520), in particular a layer of piezoelectric material, a step of forming (SA2, SB2) at least one recess (240, 340, 440, 540) in a surface of the cover layer (220, 420, 520), and an assembling step (S42, S52) of the support substrate (210, 410, 510) and the covering layer (220, 420, 520) at an assembly interface between the supporting substrate (210, 410, 510) and the surface of the covering layer (220, 420, 520) comprising the at least one recess (240, 340, 440, 540).
    [0012]
    A method of manufacturing a heterostructure (200, 400, 400 ', 500') according to claim 11, further comprising a step of thinning (S43) the surface of the cover layer (220, 420, 520) opposite to the assembly interface.
    [0013]
    13. A method of manufacturing a heterostructure (200, 400, 400 ', 500') according to the preceding claim 12, wherein the thinning step (S43) comprises an implantation step (SA1, SB1) of atomic or ionic species, in particular H or He, before assembly, to form an embrittlement zone (570) in the covering layer (220, 420, 520), and an exfoliation step (S53) at the level of the zone of weakening after assembly.
    [0014]
    A method of manufacturing a heterostructure (200, 400, 400 ', 500') according to claim 12, wherein the thinning step (S43) is performed by a technique selected from the group of following techniques: grinding , polishing, etching, or any combination thereof.
    [0015]
    15. A method of manufacturing a heterostructure (200, 400, 400 ', 500') according to one of claims 12 to 14, wherein the thinning step (S43) opens the at least one recess (240 , 340, 440, 540).
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    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1501222A|FR3037443B1|2015-06-12|2015-06-12|HETEROSTRUCTURE AND METHOD OF MANUFACTURE|
    FR1501222|2015-06-12|FR1501222A| FR3037443B1|2015-06-12|2015-06-12|HETEROSTRUCTURE AND METHOD OF MANUFACTURE|
    PCT/EP2016/063198| WO2016198542A1|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    EP16728029.6A| EP3308411B1|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    JP2017563155A| JP2018518840A|2015-06-12|2016-06-09|Heterostructure and method of manufacture|
    KR1020177036949A| KR20180011243A|2015-06-12|2016-06-09|Heterostructure and manufacturing method|
    CN202010766588.7A| CN111864051A|2015-06-12|2016-06-09|Support substrate and use thereof|
    SG10201911991YA| SG10201911991YA|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    CN201680033898.XA| CN107710431B|2015-06-12|2016-06-09|Heterostructure and method of fabricating a heterostructure|
    KR1020207036755A| KR102301378B1|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    KR1020207007038A| KR102285595B1|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    US15/735,477| US10826459B2|2015-06-12|2016-06-09|Heterostructure and method of fabrication|
    US16/877,309| US20200280298A1|2015-06-12|2020-05-18|Heterostructure and method of fabrication|
    US17/075,465| US20210058058A1|2015-06-12|2020-10-20|Heterostructure and method of fabrication|
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